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2.5V Drive Nch MOSFET
RTR025N05
Structure
Silicon N-channel MOSFET
Dimensions (Unit : mm)
TSMT3
1.0MAX
2.9
0.4
0.85
0.7
Features
1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT3).
(3)
(1) (2)
0.95 0.95
0~0.1
(1) Gate
1.9
0.16
Each lead has same dimensions
Application
Switching
Packaging specifications
Package
Taping
(2) Source
(3) Drain
Inner circuit
Abbreviated symbol : PW
(3)
Type
Code
TL
RTR025N05
Basic ordering unit (pieces)
3000
(1)
? 2
Absolute maximum ratings (Ta=25 ° C)
? 1
Parameter
Drain-source voltage
Gate-source voltage
Symbol
V DSS
V GSS
Limits
45
± 12
Unit
V
V
(2)
? 1 ESD PROTECTION DIODE
? 2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
Drain current
Source current
(Body diode)
Total power dissipation
Continuous
Pulsed
Continuous
Pulsed
I D
I DP
I S
I SP
P D
? 1
? 1
? 2
± 2.5
± 10
0.8
10
1.0
A
A
A
A
W
Channel temperature
Range of Storage temperature
Tch
Tstg
150
? 55 to + 150
° C
° C
? 1 Pw ≤ 10 μ s, Duty cycle ≤ 1%
? 2 When mounted on a ceramic board
Thermal resistance
Parameter
Channel to ambient
Symbol
Rth (ch-a) ?
Limits
125
Unit
° C / W
? When mounted on a ceramic board
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1/4
2009.06 - Rev.A
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